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FLM3439-8F
C-Band Internally Matched FET FEATURES
* * * * * * * High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 11.0dB (Typ.) High PAE: add = 37% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package
DESCRIPTION
The FLM3439-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 42.8 -65 to +175 175 Unit V V W C C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G IM3 Rth Tch f = 3.9 GHz, f = 10 MHz 2-Tone Test Pout = 28.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.55 IDSS (Typ.), f = 3.4 ~ 3.9 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 2200mA VDS = 5V, IDS = 180mA IGS = -180A Min. -1.0 -5.0 38.5 10.0 -44 Limit Typ. Max. 3900 5850 2000 -2.0 39.5 11.0 -3.5 Unit mA mS V V dBm dB mA % dB dBc C/W C
2200 2600 40 -46 3.0 0.6 3.5 80
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1 August 2004
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FLM3439-8F
C-Band Internally Matched FET
POWER DERATING CURVE
50
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V f1 = 3.9 GHz f2 = 3.91 GHz 2-tone test
-10
Pout
Total Power Dissipation (W)
36
Output Power (S.C.L.) (dBm)
40
34 32 30 28 26 24
30
20
-30
IM3
10
-40 -50
0
50
100
150
200 14 16 18 20 22 24
Case Temperature (C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
41
OUTPUT POWER vs. INPUT POWER
VDS = 10V f = 3.65 GHz
VDS=10V P1dB Output Power (dBm)
Pin=28dBm
40 38 36 34 32 30
Output Power (dBm)
40 39
26dBm
38 37
24dBm
Pout
45
add
36 35
22dBm
30 15
34 3.4 3.65 3.9
18
20
22
24
26
28
Frequency (GHz)
Input Power (dBm)
2
add (%)
IM3 (dBc)
-20
FLM3439-8F
C-Band Internally Matched FET
+j50 +j25
3.2GHz 3.3
+j100
8 6
+j10
3.6
3.7
3.8 3.4 4.0 3.9 3.8 3.7 3.9 4.1 3.5 3.6
+j250
3.4
3.5 4 3.3 3.2GHz 3.3 3.2GHz 4.1 3.9
SCALE FOR |S21|
S11 S22
+90
S21 S12
3.6
0
10
25
250 4.0 3.2GHz
180
SCALE FOR |S12| 0.1 0.2
4.1
3.4 2
3.5 3.6
3.7
0
3.8
3.5
3.7 3.8 4.0 3.9
4.0
-j10
3.4
4.1 3.3
-j250
-j25 -j50
-j100 -90
FREQUENCY (MHZ)
3200 3300 3400 3500 3600 3700 3800 3900 4000 4100
S11 MAG
.678 .592 .468 .356 .325 .370 .430 .482 .521 .555
ANG
-23.1 -48.9 -89.5 -142.0 155.0 100.5 58.4 20.9 -12.8 -42.3
S-PARAMETERS VDS = 10V, IDS = 2200mA S21 S12 MAG ANG MAG ANG
2.932 3.564 4.318 4.736 4.801 4.708 4.507 4.242 3.952 3.701 -142.8 -173.1 148.1 108.4 68.4 29.7 -7.2 -44.7 -79.7 -110.7 .045 .056 .070 .080 .085 .085 .083 .080 .077 .073 153.4 123.1 84.0 44.3 4.6 -33.5 -69.5 -105.6 -139.4 -168.7
S22 MAG
.678 .628 .533 .405 .270 .159 .121 .172 .252 .328
ANG
78.6 60.6 36.5 13.3 -4.4 -6.5 19.6 37.8 35.1 27.1
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FLM3439-8F
C-Band Internally Matched FET
Case Style "IB" Metal-Ceramic Hermetic Package
2.0 Min. (0.079) 2-R 1.60.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.60.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.90.2 (0.508)
12.0 (0.422) 17.00.15 (0.669) 21.00.15 (0.827)
1. Gate 2. Source (Flange) 3. Drain
Unit: mm(inches)
For further information please contact:
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111
www.us.eudyna.com
* Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd. Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921
Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
Eudyna Devices Inc.
Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170
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